AO6409AL p-channel enhancement mode field effect transistor general description product summary paramete r -20v i d (at v gs =-4.5v) -5.5 a r ds(on) (at v gs = -4.5v) < 44m ? r ds(on) (at v gs = -2.5v) < 53m ? r ds(on) (at v gs = -1.8v) < 68m ? - rohs compliant - halogen free esd protected symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r jl 1.3 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics units parameter typ max c/w r ja 48 75 60 v 8 gate-source voltage drain-source voltage -20 the AO6409AL uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch applications. v ds v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted a i d -5.5 -4 -30 t a =25c t a =70c power dissipation b p d pulsed drain current c continuous drain current t a =25c w 2.1 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 37 90 45 maximum junction-to-ambient a s g d tsop6 top view bottom view dd g d s d top view rev 0: january 2009 www.aosmd.com page 1 of 5
AO6409AL symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 10 ? ? s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =1.8 ? , r gen =3 ? turn-off fall time total gate charge v gs =-4.5v, v ds =-10v, i d =-5.5a gate source charge gate drain charge m ? i s =-1a,v gs =0v v ds =-5v, i d =-5.5a v gs =-2.5v, i d =-5a v gs =-1.8v, i d =-4a forward transconductance diode forward voltage static drain-source on-resistance r ds(on) i dss a v ds =v gs i d =-250 a v ds =0v, v gs = 8v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-5.5a reverse transfer capacitance i f =-5.5a, di/dt=500a/ s v gs =0v, v ds =-10v, f=1mhz switching parameters a . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. rev 0: january 2009 www.aosmd.com page 2 of 5
AO6409AL typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 3 6 9 12 15 0 0.5 1 1.5 2 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 20 30 40 50 60 70 80 0246810 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance 20 40 60 80 100 120 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-5.5a 25c 125c 0 5 10 15 20 25 30 35 40 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =-1.5v -2.0v -4.5v -8v -2.5v -3.0v v gs =-2.5v i d =-5.5a, v gs =-4.5v i d =-5a, v gs =-2.5v i d =-4a, v gs =-1.8v rev 0: january 2009 www.aosmd.com page 3 of 5
AO6409AL typical electrical and thermal characteristic s 0 1 2 3 4 5 024681012 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-10v i d =-5.5a 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r ja =90c/w 100ms t j(max) =150c t a =25c rev 0: january 2009 www.aosmd.com page 4 of 5
AO6409AL vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds tt t t t t 90% 10% r on d(off) f off d(on) rev 0: january 2009 www.aosmd.com page 5 of 5
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